LASER DIODE PUMPED OPERATION OF ER-3+-DOPED FIBER AMPLIFIER

被引：30

作者：

WHITLEY, TJ

机构：

[1] British Telecom Research Lab, United Kingdom

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 25期

关键词：

Erbium and Alloys - Fiber Optics - Light--Amplifiers - Optical Communication - Semiconductor Materials--Doping;

D O I：

10.1049/el:19881049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor laser-diode pumped operation of an erbium-doped fiber amplifier, exhibiting 6 db gain and operating at 1536 nm, is reported. The amplifier was optically pumped at 807 nm using a self-injection locked semiconductor laser diode array.

引用

页码：1537 / 1539

页数：3

共 11 条

[1] THE FABRICATION AND OPTICAL-PROPERTIES OF ND-3+ IN SILICA-BASED OPTICAL FIBERS
AINSLIE, BJ
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[2] CHANGHASNAIN C, NARROW SINGLE LOBED
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[6] LAMING RI, 1988, ECOC 88 BRIGHTON
[7] LAMING RI, 1988, P ECOC 88 BRIGHTON
[8] LOW-NOISE ERBIUM-DOPED FIBER AMPLIFIER OPERATING AT 1.54-MU-M
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[9] LOW-THRESHOLD CW OPERATION OF AN ERBIUM-DOPED FIBER LASER PUMPED AT 807-NM WAVELENGTH
MILLAR, CA
MILLER, ID
AINSLIE, BJ
CRAIG, SP
ARMITAGE, JR
[J]. ELECTRONICS LETTERS, 1987, 23 (16) : 865 - 866
[10] WHITLEY TJ, 1988, P ECOC 88

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