CMOS BANDGAP VOLTAGE REFERENCE

被引：28

作者：

TZANATEAS, G ^{[1
]}

SALAMA, CAT ^{[1
]}

TSIVIDIS, YP ^{[1
]}

机构：

[1] COLUMBIA UNIV,NEW YORK,NY 10027

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1979年 / 14卷 / 03期

关键词：

D O I：

10.1109/JSSC.1979.1051234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple micropower CMOS bandgap voltage reference is described. The reference utilizes MOS devices operating in the weak inversion region in conjunction with a process compatible bipolar device. The voltage reference is insensitive to threshold and mobility variations and is independent of the slope factor which characterizes weak inversion. Copyright © 1979 by The Institute Of Electrical And Electronics Engineers, Inc.

引用

页码：655 / 657

页数：3