STEPS ON III-V(110) FACES - THEORETICAL INVESTIGATION

被引：6

作者：

LOHEZ, D

LANNOO, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1236 / 1237

页数：2

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共 16 条

[1] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS
CHADI, DJ
COHEN, ML
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (01): : 405 - 419
[2] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110)
GUICHAR, GM
SEBENNE, CA
GARRY, GA
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (17) : 1158 - 1161
[3] GUICHAR GM, 1977, 3RD P INT C SOL SURF, P623
[4] TEXTURE OF SURFACES CLEANED BY ION BOMBARDMENT AND ANNEALING
HENZLER, M
[J]. SURFACE SCIENCE, 1970, 22 (01) : 12 - &
[5] COMPARATIVE LEED AND RHEED EXAMINATION OF STEPPED SURFACES - APPLICATION TO CU(111) AND GAAS(001) VICINAL SURFACES
HOTTIER, F
THEETEN, JB
MASSON, A
DOMANGE, JL
[J]. SURFACE SCIENCE, 1977, 65 (02) : 563 - 577
[6] HOTTIER F, 1976, THESIS ORSAY
[7] HUYSER A, 1975, SURF SCI, V52, P202
[8] EVIDENCE FOR SUBSURFACE ATOMIC DISPLACEMENTS OF GAAS(110) SURFACE FROM LEED/CMTA ANALYSIS
KAHN, A
CISNEROS, G
BONN, M
MARK, P
DUKE, CB
[J]. SURFACE SCIENCE, 1978, 71 (02) : 387 - 396
[9] LANNOO M, 1978, HDB SURFACES INTERFA, P11
[10] APPROACH TO STRUCTURE DETERMINATION OF COMPOUND SEMICONDUCTOR SURFACES BY KINEMATICAL LEED CALCULATIONS - GAAS(110) AND ZNSE(110)
MARK, P
CISNEROS, G
BONN, M
KAHN, A
DUKE, CB
PATON, A
LUBINSKY, AR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 910 - 916