FAST FREQUENCY-TUNABLE EXTERNAL-CAVITY LASER

[1] ANTIREFLECTION COATINGS ON SEMICONDUCTOR-LASER FACETS USING SPUTTERED LEAD SILICATE GLASS [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (09) : 1373 - 1375

[2] EXTERNAL-CAVITY SEMICONDUCTOR-LASER WITH 15-NM CONTINUOUS TUNING RANGE [J]. ELECTRONICS LETTERS, 1986, 22 (15) : 795 - 796

[3] COHERENT LIGHTWAVE TRANSMISSION OVER 150 KM FIBER LENGTHS AT 400 MBIT/S AND 1-GBIT/S DATA RATES USING PHASE MODULATION [J]. ELECTRONICS LETTERS, 1986, 22 (01) : 30 - 31

[4] LINKE RA, 1985, OCT IOOC ECOC 85 VEN, P35

[5] Wyatt R., 1985, British Telecom Technology Journal, V3, P5

[6] 10-KHZ LINEWIDTH 1.5 MU-M INGAASP EXTERNAL CAVITY LASER WITH 55-NM TUNING RANGE [J]. ELECTRONICS LETTERS, 1983, 19 (03) : 110 - 112

[1] ANTIREFLECTION COATINGS ON SEMICONDUCTOR-LASER FACETS USING SPUTTERED LEAD SILICATE GLASS [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1986, 4 (09) : 1373 - 1375

[2] EXTERNAL-CAVITY SEMICONDUCTOR-LASER WITH 15-NM CONTINUOUS TUNING RANGE [J]. ELECTRONICS LETTERS, 1986, 22 (15) : 795 - 796

[3] COHERENT LIGHTWAVE TRANSMISSION OVER 150 KM FIBER LENGTHS AT 400 MBIT/S AND 1-GBIT/S DATA RATES USING PHASE MODULATION [J]. ELECTRONICS LETTERS, 1986, 22 (01) : 30 - 31

[4] LINKE RA, 1985, OCT IOOC ECOC 85 VEN, P35

[5] Wyatt R., 1985, British Telecom Technology Journal, V3, P5

[6] 10-KHZ LINEWIDTH 1.5 MU-M INGAASP EXTERNAL CAVITY LASER WITH 55-NM TUNING RANGE [J]. ELECTRONICS LETTERS, 1983, 19 (03) : 110 - 112