SIMULATION OF MICROCRACK EFFECTS IN DISSOLUTION OF POSITIVE RESIST EXPOSED BY X-RAY-LITHOGRAPHY

被引：9

作者：

GUERRIERI, R ^{[1
]}

NEUREUTHER, AR ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1988年 / 7卷 / 07期

关键词：

D O I：

10.1109/43.3946

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：755 / 764

页数：10

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