MOLECULAR FIELD-EFFECT TRANSISTORS USING CONDUCTING POLYMER LANGMUIR-BLODGETT-FILMS

被引：242

作者：

PALOHEIMO, J ^{[1
]}

KUIVALAINEN, P ^{[1
]}

STUBB, H ^{[1
]}

VUORIMAA, E ^{[1
]}

YLILAHTI, P ^{[1
]}

机构：

[1] HELSINKI UNIV TECHNOL,FAC ELECT ENGN,ELECTRON PHYS LAB,SF-02150 ESPOO,FINLAND

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.103182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film field-effect transistors (FETs) have been prepared using poly(3-hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir-Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.

引用

页码：1157 / 1159

页数：3

共 15 条

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