A GENERAL 4-TERMINAL CHARGING-CURRENT MODEL FOR THE INSULATED-GATE FIELD-EFFECT TRANSISTOR .1.

被引：18

作者：

ROBINSON, JA

ELMANSY, YA

BOOTHROYD, AR

机构：

[1] INTEL CORP,ALOHA,OR 97005

[2] CARLETON UNIV,DEPT ELECTR,OTTAWA K1S 5B6,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 05期

关键词：

D O I：

10.1016/0038-1101(80)90074-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：405 / 410

页数：6

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[3] NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
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