RADIATIVE AND NON-RADIATIVE TUNNELLING IN GLOW-DISCHARGE AND SPUTTERED AMORPHOUS SILICON

被引：39

作者：

SEARLE, TM ^{[1
]}

NASHASHIBI, TS ^{[1
]}

AUSTIN, IG ^{[1
]}

DEVONSHIRE, R ^{[1
]}

LOCKWOOD, G ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT CHEM,SHEFFIELD S3 7RH,S YORKSHIRE,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1979年 / 39卷 / 05期

关键词：

D O I：

10.1080/13642817908245810

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoiuminescence decay measurements are reported for doped and undoped glow-discharge a-Si, and for a-Si prepared by sputtering in a hydrogenated atmosphere. It is concluded that a distribution of radiative lifetimes is present, due either to non-crystalline disorder or to a donor-acceptor pair mechanism. The main competitive mechanism is tunnelling to defects. © 1979 Taylor & Francis Ltd.

引用

页码：389 / 403

页数：15

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