ANNEALING STUDY OF ION-IMPLANTED SILICON BY PHOTOELECTROMAGNETIC METHOD

被引：1

作者：

INADA, T

NISHIMURA, H

OHNUKI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 04期

关键词：

D O I：

10.1063/1.1654315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：137 / +

页数：1

共 15 条

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[2] HALL-EFFECT MEASUREMENT ON INDIUM-IMPLANTED SILICON [J].

BERGAMINI, P ;

FABRI, G ;

PANDARESE, F .

APPLIED PHYSICS LETTERS, 1970, 17 (01) :18-+

[3] INVESTIGATIONS OF SURFACE RECOMBINATION VELOCITIES ON GERMANIUM BY THE PHOTOELECTROMAGNETIC METHOD [J].

BUCK, TM ;

BRATTAIN, WH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1955, 102 (11) :636-640

[4] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J].

GIBSON, WM ;

MARTIN, FW ;

STENSGAARD, R ;

JENSEN, FP ;

MEYER, NI ;

GALSTER, G ;

JOHANSEN, A ;

OLSEN, JS .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :675-+

[5]

Hunsperger R. G., 1971, Radiation Effects, V9, P133, DOI 10.1080/00337577108242045

[6]

INADA T, 1969, THESIS WASEDA U

[7] DOPING OF SILICON BY ION IMPLANTATION [J].

ITOH, T ;

INADA, T ;

KANEKAWA, K .

APPLIED PHYSICS LETTERS, 1968, 12 (08) :244-&

[8] ANNEAL BEHAVIOR OF ALUMINUM-IMPLANTED GERMANIUM [J].

ITOH, T ;

OHDOMARI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (08) :1002-&

[9] TEMPERATURE DEPENDENCE OF RHS IN ALUMINUM-IMPLANTED LAYER IN N-TYPE SINGLE CRYSTAL SILICON [J].

ITOH, T ;

INADA, T ;

ISHIKI, M ;

MENABE, K .

APPLIED PHYSICS LETTERS, 1969, 14 (09) :255-&

[10]

Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

← 1 2 →