THERMOELECTRIC PROPERTIES OF FESI2-BASE SEMICONDUCTORS WITH AG ADDITION

被引：13

作者：

WATANABE, T ^{[1
]}

HASAKA, M ^{[1
]}

MIYASE, T ^{[1
]}

机构：

[1] NAGASAKI UNIV, DEPT MAT SCI & ENGN, NAGASAKI 852, JAPAN

来源：

JOURNAL OF THE JAPAN INSTITUTE OF METALS | 1994年 / 58卷 / 03期

关键词：

IRON SILICIDE; THERMOELECTRIC SEMICONDUCTOR; THERMOELECTROMOTIVE FORCE; SEEBECK COEFFICIENT; ELECTRICAL RESISTIVITY; MELT-SPUN; SINTERING;

D O I：

10.2320/jinstmet1952.58.3_353

中图分类号：

学科分类号：

摘要：

The objective of this paper is to fabricate a thermoelectric semiconductor with high-generating power. After powders were prepared from the melt-spun ribbons of FeSi2-1 at%M (M = B, Mn, Co) which were made by a single roll method, they were sintered with Ag-powder or AgNO3-solution. When the powders of FeSi2-1 at%Co were sintered with AgNO3-solution, the large power factor is obtained due to the reduced electrical resistivity.

引用

页码：353 / 358

页数：6

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