LUMINESCENCE EFFICIENCY OF SILICON CARBIDE DOPED WITH BORON AND NITROGEN

被引：14

作者：

POTTER, RM

CUSANO, DA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 08期

关键词：

D O I：

10.1149/1.2426752

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：848 / +

页数：1

共 11 条

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[7] RADIATIVE RECOMBINATION IN GAP P-N AND TUNNEL JUNCTIONS [J].

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[8]

PRENER JS, PRIVATE COMMUNICATIO

[9]

STUDER FJ, PRIVATE COMMUNICATIO

[10]

VIOLIN EE, 1964, FIZ TVERD TELA+, V6, P1331

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