DEEP STATES IN TRANSITION-METAL DIFFUSED GALLIUM-PHOSPHIDE

被引:38
作者
BRUNWIN, RF [1 ]
HAMILTON, B [1 ]
HODGKINSON, J [1 ]
PEAKER, AR [1 ]
DEAN, PJ [1 ]
机构
[1] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
关键词
D O I
10.1016/0038-1101(81)90087-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:249 / 256
页数:8
相关论文
共 32 条
  • [1] ABAGYAN SA, 1975, SOV PHYS SEMICOND+, V9, P243
  • [2] ABAGYAN SA, 1976, SOV PHYS SEMICOND+, V10, P1283
  • [3] ABAGYAN SA, 1976, SOV PHYS SEMICOND+, V10, P1056
  • [4] ADRIANOV DG, 1976, SOV PHYS SEMICOND, V10, P696
  • [5] ABSORPTION SPECTRUM OF NICKEL IN GALLIUM PHOSPHIDE
    BARANOWSKI, JM
    ALLEN, JW
    PEARSON, GL
    [J]. PHYSICAL REVIEW, 1968, 167 (03): : 758 - +
  • [6] PHOTO-LUMINESCENCE EXCITATION SPECTROSCOPY OF 3D TRANSITION-METAL IONS IN GAP AND ZNSE
    BISHOP, SG
    DEAN, PJ
    PORTEOUS, P
    ROBBINS, DJ
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (07): : 1331 - 1340
  • [7] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT
    BJORKLUND, G
    GRIMMEISS, HG
    [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 589 - +
  • [8] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
    CARD, HC
    RHODERICK, EH
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (03) : 365 - 374
  • [9] CLARK MG, 14TH P INT C PHYS SE
  • [10] Dean P. J., 1973, Journal of Luminescence, V7, P51, DOI 10.1016/0022-2313(73)90059-8