DEPTH PROFILING OF HYDROGEN PASSIVATION OF BORON IN SI(100)

被引：10

作者：

HUANG, LJ ^{[1
]}

LAU, WM ^{[1
]}

SIMPSON, PJ ^{[1
]}

SCHULTZ, PJ ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO, DEPT PHYS, LONDON N6A 3K7, ONTARIO, CANADA

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.46.4086

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of SiO2/p-Si were studied using variable-energy positron-annihilation spectroscopy and Raman spectroscopy. The oxide film was formed by ozone oxidation in the presence of ultraviolet radiation at room temperature. Both the positron-annihilation and Raman analyses show that chemical cleaning of boron-doped p-type Si(100) using concentrated hydrofluoric acid prior to the oxide formation leads to hydrogen incorporation in the semiconductor. The incorporated hydrogen passivates the boron dopant by forming a B-H complex, the presence of which increases the broadening of the line shape in the positron-annihilation analysis, and narrows the linewidth of the Raman peak. Annealing of the SiO2/Si sample at a moderate temperature of 220-degrees-C in vacuum was found sufficient to dissociate the complex and reactivate the boron dopant.

引用

页码：4086 / 4091

页数：6

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