FORMATION OF TIN-ENCAPSULATED COPPER STRUCTURES IN A NH3 AMBIENT

被引：41

作者：

LI, JA

MAYER, JW

SHACHAMDIAMAND, Y

COLGAN, EG

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

[2] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 24期

关键词：

D O I：

10.1063/1.106783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A TiN-encapsulated copper structure was made by annealing a Cu-10 at. %Ti alloy film evaporated on a SiO2/Si(100) substrate at 550-degrees-C in a NH3 ambient. A fast heating rate (70-degrees-C/min) to 550-degrees-C can effectively suppress the formation Of Cu3Ti and enhance the TiN(x) formation near the surface of the copper film. Oxygen incorporation in the TiN(x) layer was found by Auger depth profiling measurement. This self-encapsulated Cu structure exhibits good adhesion to SiO2 and oxidation resistance.

引用

页码：2983 / 2985

页数：3

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