ELECTRICAL-PROPERTIES OF GEO2 FILMS

被引：9

作者：

KHAN, MN ^{[1
]}

KHAN, MI ^{[1
]}

HOGARTH, CA ^{[1
]}

机构：

[1] BRUNEL UNIV, DEPT PHYS, UXBRIDGE UB8 3PH, MIDDLESEX, ENGLAND

来源：

PHYSICAL REVIEW B | 1980年 / 22卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.22.6155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6155 / 6161

页数：7

共 13 条

[1] ELECTRICAL PROPERTIES OF AL-SIOX-AG THIN-FILM CATHODES [J].

COLLINS, RA ;

EDGE, IA ;

LEGG, KO .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 9 (01) :309-+

[2]

Dearnaley G., 1970, Journal of Non-Crystalline Solids, V4, P593, DOI 10.1016/0022-3093(70)90097-9

[3] ELECTRONIC CONDUCTION THEORUGH THIN UNSATURATED OXIDE LAYERS [J].

DEARNALEY, G .

PHYSICS LETTERS A, 1967, A 25 (10) :760-+

[4] FURTHER STUDIES ON THIN-FILM STRUCTURES OF METAL BOROSILICATE GLASS-METAL [J].

HOGARTH, CA ;

TAHERI, EHZ .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1974, 37 (02) :145-156

[5]

HOLLAND L, 1965, THIN FILM MICROELECT, P204

[6]

HOSNEIA G, 1961, Z PHYS, V1651, P213

[7] MEMORY SWITCHING IN GEO2 FILMS [J].

KHAN, MI ;

HOGARTH, CA ;

KHAN, MN .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (02) :215-216

[8]

RALPH JE, 1972, J NONCRYST SOLIDS, V7, P236

[9]

SHIROKSHINA ZV, 1958, OPT SPEKTROSK+, V4, P82

[10]

SIMMONS JG, 1967, RADIO ELECTRONIC ENG, V34, P81

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