HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY ON CRYSTALLIZATION OF GOLD-IMPLANTED AMORPHOUS SIC

被引：4

作者：

MORI, H

SAKATA, T

机构：

[1] Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Suita, Osaka, 565, Yamadaoka

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 94卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)95659-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Crystallization behavior of gold-implanted amorphous SiC was studied by high resolution electron microscopy. (1) Prior to crystallization, a concentration fluctuation of gold is induced in the amorphous matrix with annealing. The typical annealing temperature at which evolution of the fluctuation becomes evident is 1023 K. (2) With annealing at 1173 K, crystallization takes place locally and crystallites of beta-SiC are formed. It is suggested that this initial crystallization occurs preferentially in the gold-depleted region. (3) With annealing at 1373 K, complete crystallization takes place; gold-implanted amorphous SiC eventually crystallizes into two phases: beta-SiC and fcc gold.

引用

页码：73 / 80

页数：8

共 13 条

[1]

FUJITA H, 1988, 5TH P JAP I MET INT, P37

[2]

FUJITA H, 1985, P INT S BEHAVIOR LAT, P1

[3]

FUJITA H, 1987, Patent No. 4668527

[4]

KNIPPENBERG WF, 1963, PHILIPS RES REP, V18, P161

[5] ELECTRON-IRRADIATION-INDUCED GOLD ATOM IMPLANTATION INTO SILICON-CARBIDE [J].

MORI, H ;

YASUDA, H ;

SAKATA, T ;

FUJITA, H .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1992, 124 (01) :51-59

[6]

MORI H, 1987, Patent No. 4670291

[7]

PAWEL JE, 1992, MATER RES SOC SYMP P, V238, P793

[8]

POKER DB, 1987, MATER RES SOC S P, V93, P293

[9]

POLLOCK JTA, 1987, MATER RES SOC S P, V93, P317

[10]

SANDHU GS, 1989, MATER RES SOC S P, V128, P707

← 1 2 →