PHOTOLUMINESCENCE OF RESIDUAL TRANSITION-METAL IMPURITIES IN GAN

被引：63

作者：

BAUR, J

KAUFMANN, U

KUNZER, M

SCHNIEDER, J

AMANO, H

AKASAKI, I

DETCHPROHM, T

HIRAMATSU, K

机构：

[1] MEIJO UNIV,DEPT ELECT & ELECTR ENGN,NAGOYA,AICHI 468,JAPAN

[2] NAGOYA UNIV,SCH ENGN,DEPT ELECTR,NAGOYA,AICHI 46801,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 08期

关键词：

D O I：

10.1063/1.114987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large number of epitaxial GaN samples as well as AIN ceramics have been studied by photoluminescence (PL) and pi, excitation spectroscopy. In addition to the PL of residual iron, two new bands with zero-phonon-lines at 0.931 and 1.193 eV have been observed frequently in GaN. An analysis of the PL bands indicates that they arise from internal transitions within the 3d shell of residual vanadium and chromium impurities. The chromium PL has also been observed in polycrystalline AIN ceramics. (C) 1995 American Institute of Physics.

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页码：1140 / 1142

页数：3

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