PERFORMANCE OF BROAD-BAND MICROWAVE-BIASED EXTRINSIC PHOTOCONDUCTIVE DETECTORS AT 10.6 M

被引：8

作者：

SUN, C

WALSH, TE

机构：

来源：

关键词：

D O I：

10.1109/JQE.1970.1076502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：450 / &

共 16 条

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[2]

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[5] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].

ERGINSOY, C .

PHYSICAL REVIEW, 1950, 79 (06) :1013-1014

[6]

GATCHELL EK, PRIVATE COMMUNICATIO

[7]

Ginzton E.L., 1957, MICROWAVE MEASUREMEN, P435

[8]

GODIK EE, 1966, FIZ TVERD TELA+, V8, P1228

[9]

PANKOVE JI, 1962, PHYS REV, V126, P952

PICUS, GS .