ELECTRON-PHONON SCATTERING RATES IN DISORDERED METALLIC-FILMS BELOW 1-K

被引:51
作者
ECHTERNACH, PM
THOMAN, MR
GOULD, CM
BOZLER, HM
机构
[1] Department of Physics, University of Southern California, Los Angeles
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 16期
关键词
D O I
10.1103/PhysRevB.46.10339
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied thin disordered metal films at low temperatures under nonequilibrium conditions. The electron temperature was raised above the lattice temperature by applying a dc bias. The Coulomb anomaly and weak localization were used as thermometers for the electrons. We confirm that at temperatures below 1 K the electron temperatures as derived from either the Coulomb anomaly or weak localization are consistent. The electron-phonon energy relaxation rate was measured to be proportional to T3. Our results disagree with theoretical calculations of the electron-phonon rates for dirty metals which predict electron-phonon scattering rates proportional to T4 for three-dimensional phonons.
引用
收藏
页码:10339 / 10344
页数:6
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