ELECTROLUMINESCENCE IN REVERSE-BIASSED ZINC SELENIDE SCHOTTKY DIODES

被引：32

作者：

ALLEN, JW

TURVEY, K

LIVINGSTONE, AW

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 12期

关键词：

D O I：

10.1016/0038-1101(72)90130-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1363 / +

页数：1

共 12 条

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GARLICK, GFJ .

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[2]

BRAUN S, TO BE PUBLISHED

[3]

FISCHER AG, 1964, RADIATIVE RECOMBINAT, P259

[4]

FRANZ W, 1952, ANN PHYS-BERLIN, V11, P17

[5] EFFECTS OF ION PAIR CONCENTRATION AND TEMPERATURE OF FIRING ON PHOTOLUMINESCENCE IN ZNSE(CU,IN) [J].

FUJIWARA, S ;

FUKAI, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 23 (03) :669-&

[6] TIME RESOLVED EMISSION SPECTRA FOR ZNSE(CU,IN) [J].

FUJIWARA, S ;

FUKAI, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 23 (03) :657-&

[7] ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN ZINC SELENIDE [J].

LIVINGSTONE, AW ;

ALLEN, JW .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (12) :2468-+

[8]

LIVINGSTONE AW, TO BE PUBLISHED

[9] GUNN EFFECT IN ZNSE [J].

LUDWIG, GW ;

AVEN, M .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5326-+

[10] PHOTOELECTRONIC PROPERTIES OF ZNSE CRYSTALS [J].

STRINGFELLOW, GB ;

BUBE, RH .

PHYSICAL REVIEW, 1968, 171 (03) :903-+

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