STEP-EDGE AND STACKED-HETEROSTRUCTURE HIGH-T-C JOSEPHSON-JUNCTIONS FOR VOLTAGE-STANDARD ARRAYS

被引：12

作者：

BENZ, SP ^{[1
]}

REINTSEMA, CD ^{[1
]}

ONO, RH ^{[1
]}

ECKSTEIN, JN ^{[1
]}

BOZOVIC, I ^{[1
]}

VIRSHUP, GF ^{[1
]}

机构：

[1] VARIAN ASSOCIATES INC,EL GINZTON RES CTR,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1109/77.403202

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have explored two high-transition-temperature Josephson junction technologies for application in voltage standard arrays: step-edge junctions made with YBa2Cu3O7-delta and Au normal-metal bridges, and stacked series arrays of Josephson junctions in selectively doped, epitaxially grown Bi2Sr2CaCu2O8 heterostructures. For both kinds of junctions, Shapiro steps induced by a microwave bias were characterized as a function of power. We compare the two technologies with respect to critical current and normal resistance uniformity, maximum achievable critical current, critical-current normal-resistance product, and operating temperature.

引用

页码：2915 / 2918

页数：4

共 10 条

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