BISTABILITY AND MODE HOPPING IN A SEMICONDUCTOR-LASER

被引：34

作者：

GRAY, GR

ROY, R

机构：

[1] School of Physics, Georgia Institute of Technology, Atlanta, GA

[2] The Institute of Optics, University of Rochester, Rochester, NY

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1991年 / 8卷 / 03期

关键词：

D O I：

10.1364/JOSAB.8.000632

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigated mode hopping and bistability in an AlGaAs laser diode. The dwell times of a laser mode intensity in the on and off states are measured as a function of the mode suppression ratio. Predictions of the laser behavior made from a multidimensional laser-model with Langevin noise sources are compared with experimental results. The model utilizes an asymmetric nonlinear gain that accounts for the experimentally observed bistable and multimode regimes.

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页码：632 / 638

页数：7

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