SEMICONDUCTING OXIDES - EFFECTS OF ELECTRONIC AND SURFACE-STRUCTURE ON DISSOLUTION KINETICS OF NICKEL-OXIDE

被引:40
作者
JONES, CF
SEGALL, RL
SMART, RSC
TURNER, PS
机构
来源
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I | 1978年 / 74卷
关键词
D O I
10.1039/f19787401615
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:1615 / +
页数:1
相关论文
共 17 条
[1]  
BOHNENKAMP K, 1957, Z ELEKTROCHEM, V61, P1184
[2]  
DIGGLE JW, 1973, OXIDES OXIDE FILMS, V2, P281
[3]  
DREREN J, 1973, J MATER SCI, V8, P545
[4]  
Engell H. J., 1956, Z PHYS CHEM, V7, P158
[5]   SEMICONDUCTING OXIDES - EFFECT OF PRIOR ANNEALING TEMPERATURE ON DISSOLUTION KINETICS OF NICKEL-OXIDE [J].
JONES, CF ;
SEGALL, RL ;
SMART, RSC ;
TURNER, PS .
JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1977, 73 :1710-+
[6]  
LEE CH, 1971, 40 OFF NAV RES TECH
[7]  
MORRISON SR, 1972, PROG SURF SCI, V1, P105
[8]  
MYAMLIN VA, 1965, ELECTROCHEMISTRY SEM
[9]  
NII K, 1970, CORROS SCI, V10, P571
[10]   DEFECT STRUCTURE AND ELECTRICAL PROPERTIES OF NIO .1. HIGH TEMPERATURE [J].
OSBURN, CM ;
VEST, RW .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1331-+