SOME PROPERTIES OF HIGH RESISTIVITY P-TYPE GERMANIUM

被引:60
作者
DUNLAP, WC
机构
来源
PHYSICAL REVIEW | 1950年 / 79卷 / 02期
关键词
D O I
10.1103/PhysRev.79.286
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:286 / 292
页数:7
相关论文
共 13 条
[1]   THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].
CONWELL, E ;
WEISSKOPF, VF .
PHYSICAL REVIEW, 1950, 77 (03) :388-390
[2]   NON-RECTIFYING GERMANIUM [J].
DUNLAP, WC ;
HENNELLY, EF .
PHYSICAL REVIEW, 1948, 74 (08) :976-976
[3]  
DUNLAP WC, 1947, PHYS REV, V71, pA471
[4]  
DUNLAP WC, 1950, PHYS REV, V77, pA759
[5]  
FROHLICH, 1936, ELECTRON THEORY META
[6]  
HAYNES JR, 1949, PHYS REV, V77, pA739
[7]  
ISENBERG, 1948, PHYS REV, V74, P1255
[8]  
LARKHOROVITZ, 1946, PHYS REV, V69, pA258
[9]   CONTACT POTENTIAL DIFFERENCE IN SILICON CRYSTAL RECTIFIERS [J].
MEYERHOF, WE .
PHYSICAL REVIEW, 1947, 71 (10) :727-735
[10]   ELECTRICAL PROPERTIES OF PURE SILICON AND SILICON ALLOYS CONTAINING BORON AND PHOSPHORUS [J].
PEARSON, GL ;
BARDEEN, J .
PHYSICAL REVIEW, 1949, 75 (05) :865-883