MEASUREMENT OF THE OCCUPATION LENGTHS OF CHANNELED 17-MEV ELECTRONS AND 54-MEV ELECTRONS AND POSITRONS IN SILICON BY MEANS OF CHANNELING RADIATION

被引：38

作者：

KEPHART, JO

PANTELL, RH

BERMAN, BL

DATZ, S

PARK, H

KLEIN, RK

机构：

[1] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

[2] GEORGE WASHINGTON UNIV,DEPT PHYS,WASHINGTON,DC 20052

[3] OAK RIDGE NATL LAB,DIV PHYS,OAK RIDGE,TN 37831

[4] AT&T BELL LABS,ALLENTOWN,PA 18103

[5] ADV MICRO DEVICES INC,SUNNYVALE,CA 94088

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.40.4249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4249 / 4263

页数：15

共 31 条

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