ANNEALING CHARACTERISTICS OF PHOSPHORUS IMPLANTED SILICON .1.

被引：20

作者：

BICKNELL, RW

机构：

来源：

PHILOSOPHICAL MAGAZINE | 1972年 / 26卷 / 02期

关键词：

D O I：

10.1080/14786437208227427

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：273 / &

共 16 条

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RAY, ILF ;

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[8]

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[9]

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[10]

GROVES GW, 1962, PHIL MAG, V6, P1527