FREE EXCITON EMISSION IN FORWARD-BIASED CDS MIS DIODES

被引:4
作者
FAN, XW
WOODS, J
机构
关键词
D O I
10.1016/0038-1098(81)90322-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:559 / 561
页数:3
相关论文
共 14 条
[1]  
BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P182
[2]   EXCITON-PHONON INTERACTIONS IN CDS [J].
BLEIL, CE .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1631-&
[3]  
BLEIL CE, 1964, 7 P INT C PHYS SEM, P897
[4]   MECHANISM AND DEFECT RESPONSIBLE FOR EDGE EMISSION IN CDS [J].
COLLINS, RJ .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1135-1140
[5]  
FAN XW, J PHYSICS C
[6]  
FAN XW, 1981, T ELECTRON DEVICES, V28, P428
[7]   FREE EXCITON MOTION IN CRYSTALS AND EXCITON-PHONON INTERACTION [J].
GROSS, E ;
PERMOGOR.S ;
RAZBIRIN, B .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (10) :1647-&
[8]  
GROSS EF, 1966, FIZ TVERD TELA+, V8, P1180
[9]   NATURE OF LASER TRANSITION IN CDS CRYSTAL AT 90 DEGREES K WITH 2-PHOTON EXCITATION [J].
KULEWSKY, LA ;
PROKHOROV, AM .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1966, QE 2 (09) :584-+
[10]   CALCULATION OF DONOR DENSITIES FROM C-U MEASUREMENTS ON MIS ZNSE DIODES [J].
LAWTHER, C ;
WOODS, J .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 46 (01) :245-250