PRODUCTION OF HIGH-QUALITY AMORPHOUS-SILICON FILMS BY EVAPORATIVE SILANE SURFACE DECOMPOSITION

被引：169

作者：

DOYLE, J ^{[1
]}

ROBERTSON, R ^{[1
]}

LIN, GH ^{[1
]}

HE, MZ ^{[1
]}

GALLAGHER, A ^{[1
]}

机构：

[1] NBS,BOULDER,CO 80309

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3215 / 3223

页数：9

共 37 条

[11] REACTIONS OF RECOILING SILICON ATOMS WITH PHOSPHINE-DIENE MIXTURES AND QUESTION OF SILYLENE INTERMEDIATES [J].

HWANG, RJ ;

GASPAR, PP .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (21) :6626-6635

[12]

LANGMUIR I, 1913, T AIEE, V32, P1893

[13]

LEY L, 1984, PHYSICS HYDROGENATED, V2, P144

[14]

LUFT W, 1987, SERI TR2113052 REP

[15] REACTIONS OF CARBON ATOMS AND METHYNE (CH) WITH HYDROGEN AND ETHYLENE [J].

MACKAY, C ;

NICHOLAS, J ;

WOLFGANG, R .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1967, 89 (23) :5758-&

[16] HIGH-QUALITY AMORPHOUS-SILICON GERMANIUM PRODUCED BY CATALYTIC CHEMICAL VAPOR-DEPOSITION [J].

MATSUMURA, H .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :804-805

[17] CATALYTIC CHEMICAL VAPOR-DEPOSITION (CTL-CVD) METHOD PRODUCING HIGH-QUALITY HYDROGENATED AMORPHOUS-SILICON [J].

MATSUMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12) :L949-L951

[18] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON .2. FILM PROPERTIES [J].

MEUNIER, M ;

FLINT, JH ;

HAGGERTY, JS ;

ADLER, D .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :2822-2829

[19] INFLUENCE OF PREPARATION CONDITIONS ON THE HYDROGEN CONTENT OF AMORPHOUS GLOW-DISCHARGE SILICON [J].

MILLEVILLE, M ;

FUHS, W ;

DEMOND, FJ ;

MANNSPERGER, H ;

MULLER, G ;

KALBITZER, S .

APPLIED PHYSICS LETTERS, 1979, 34 (02) :173-174

[20] DERIVATION OF THE LOW-ENERGY OPTICAL-ABSORPTION SPECTRA OF A-SI-H FROM PHOTOCONDUCTIVITY [J].

MODDEL, G ;

ANDERSON, DA ;

PAUL, W .

PHYSICAL REVIEW B, 1980, 22 (04) :1918-1925

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