PHOTOLUMINESCENCE STUDIES OF SILICON-ON-INSULATOR SUBSTRATES FORMED BY OXYGEN IMPLANTATION

被引：12

作者：

DAVEY, ST ^{[1
]}

DAVIS, JR ^{[1
]}

REESON, KJ ^{[1
]}

HEMMENT, PLF ^{[1
]}

机构：

[1] UNIV SURREY,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.99445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：465 / 467

页数：3

共 17 条

[1]

ARMSTRONG G, 1987, 5TH INT C NUM AN SEM

[2] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].

CELLER, GK ;

HEMMENT, PLF ;

WEST, KW ;

GIBSON, JM .

APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534

[3]

CRISTOLOVENEAU S, 1985, ELECTRON LETT, V21, P803

[4] HIGH-PERFORMANCE SOI-CMOS TRANSISTORS IN OXYGEN-IMPLANTED SILICON WITHOUT EPITAXY [J].

DAVIS, JR ;

REESON, KJ ;

HEMMENT, PLF ;

MARSH, CD .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) :291-293

[5] DEPENDENCE OF SILICON-ON-INSULATOR TRANSISTOR PARAMETERS ON OXYGEN IMPLANTATION TEMPERATURE [J].

DAVIS, JR ;

TAYLOR, MR ;

SPILLER, GDT ;

SKEVINGTON, PJ ;

HEMMENT, PLF .

APPLIED PHYSICS LETTERS, 1986, 48 (19) :1279-1281

[6] SYSTEMATICS OF BOUND EXCITONS AND BOUND MULTIEXCITON COMPLEXES FOR SHALLOW DONORS IN SILICON [J].

ELLIOTT, KR ;

MCGILL, TC .

SOLID STATE COMMUNICATIONS, 1978, 28 (07) :491-496

[7] PROMOTION OF PRACTICAL SIMOX TECHNOLOGY BY THE DEVELOPMENT OF A 100 MA-CLASS HIGH-CURRENT OXYGEN IMPLANTER [J].

IZUMI, K ;

OMURA, Y ;

NAKASHIMA, S .

ELECTRONICS LETTERS, 1986, 22 (15) :775-777

[8]

KAMINSKII AS, 1978, SOV PHYS JETP, V47, P1162

[9]

MARGAIL J, 1985, MAY MAT RES SOC M ST

[10]

MINEAV NS, 1981, PHYS STATUS SOLIDI A, V68, P561

← 1 2 →