HIGH-TEMPERATURE STABLE TASIX-GAAS SCHOTTKY-BARRIER

被引：6

作者：

KAO, CH ^{[1
]}

HUANG, FS ^{[1
]}

HUANG, SL ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575839

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：780 / 783

页数：4

共 9 条

[1] ELECTRICAL TRAPS IN GAAS MICROWAVE FETS [J].

ADLERSTEIN, MG .

ELECTRONICS LETTERS, 1976, 12 (12) :297-298

[2] CAPACITANCE VOLTAGE CHARACTERIZATION OF SILICIDE GAAS SCHOTTKY CONTACTS [J].

JACKSON, TN ;

DEGELORMO, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1676-1679

[3] THERMAL AND CHEMICAL-STABILITY OF SCHOTTKY METALLIZATION ON GAAS [J].

LAU, SS ;

CHEN, WX ;

MARSHALL, ED ;

PAI, CS ;

TSENG, WF ;

KUECH, TF .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1298-1300

[4]

Nicolet M.-A., 1983, MAT PROCESS CHARACTE, VVolume 6, P329

[5] CHARACTERIZATION OF WSIX/GAAS SCHOTTKY CONTACTS [J].

OHNISHI, T ;

YOKOYAMA, N ;

ONODERA, H ;

SUZUKI, S ;

SHIBATOMI, A .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :600-602

[6]

PARKER EHC, 1985, TECHNOLOGY PHYSICS M, P136

[7]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P285

[8] CHARACTERIZATION OF TANTALUM-SILICON FILMS ON GAAS AT ELEVATED-TEMPERATURES [J].

TSENG, WF ;

ZHANG, B ;

SCOTT, D ;

LAU, SS ;

CHRISTOU, A ;

WILKINS, BR .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :207-209

[9]

VASILEV AV, 1976, SOV PHYS SEMICOND+, V10, P341

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