TRANSFER OF SINGLE-LAYER POSITIVE RESIST SUBMICROMETER AND NANOMETER STRUCTURES INTO SILICON

被引：9

作者：

RANGELOW, IW

BORKOWICZ, Z

HUDEK, P

KOSTIC, I

机构：

[1] Institute of Technical Physics, University of Kassel, 34109 Kassel

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 25卷 / 01期

关键词：

ELECTRON BEAM LITHOGRAPHY; SUBMICROMETER PATTERNING; POSITIVE RESIST; EXPOSURE DOSE; PROXIMITY EFFECT; REACTIVE ION ETCHING; SILICON ETCHING;

D O I：

10.1016/0167-9317(94)90003-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The processes of electron-beam lithography (EBL) and reactive ion etching (RIE) of silicon substrates through single-layer positive-tone AZ PF-514 resist were investigated. An exposure test was developed in order to determine the basic resist parameters and to verify the EBL simulation method. The obtained results were used in experimental patterning of non-orthogonal resist structures with sub-micrometer and nanometer fragments. The e-beam pattern generator was operated at 30 kV accelerating voltage. The generated structures were transferred into bulk silicon substrate by RIE using various gas compositions. It has been shown that the best transfer properties were obtained when using the fluorine-containing plasma. The real resist-relief nanometer images and silicon-transferred trenches were studied by means of a high-resolution scanning electron microscope (SEM). The paper presents results of these investigations.

引用

页码：49 / 66

页数：18

共 13 条

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