INTEGRATED ARRAYS OF SILICON PHOTODETECTORS FOR IMAGE SENSING

被引：33

作者：

DYCK, RH

WECKLER, GP

机构：

[1] Fairchild Semiconductor Research and Development Lab., a division of Fairchild Camera and Instrument Corp., Palo Alto

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 04期

关键词：

D O I：

10.1109/T-ED.1968.16166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Development of linear and area arrays of silicon photodetectors operating in a photon flux integration mode is described. This mode of operation, which permits the trade of gain for band-width, is reviewed. It is possible to obtain full frame storage at commercial TV frame rates from area arrays of silicon phototransistors. Practical integrated structures of both diode and transistor arrays will be shown, and a method of coincidence sampling of an area array of photodetectors, which eliminates the need for isolation by the use of integrated MOST AND gates in the detector array, is described. This structure provides the following advantages. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：196 / &

共 7 条

[1] ANDERS RA, 1967, AUG WESCON TECH PAP
[2] SCANISTOR - SOLID-STATE IMAGE SCANNER
HORTON, JW
MAZZA, RV
DYM, H
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1513 - &
[3] A MONOLITHIC MOSAIC OF PHOTON SENSORS FOR SOLID-STATE IMAGING APPLICATIONS
SCHUSTER, MA
STRULL, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) : 907 - +
[4] WECKLER GP, 1967, ELECTRONICS, V40, P75
[5] WECKLER GP, 1965, OCT INT EL DEV M WAS
[6] WECKLER GP, 1967, IEEE J SOLID STATE C, VSC 2, P65
[7] WECKLER GP, 1966, OCT INT EL DEV M WAS

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