KINETICS OF LOW-PRESSURE CVD GROWTH OF SIO2 ON INP AND SI

被引：10

作者：

IYER, R

LILE, DL

机构：

[1] Colorado State Univ, Fort Collins,, CO, USA, Colorado State Univ, Fort Collins, CO, USA

来源：

关键词：

D O I：

10.1149/1.2095719

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：691 / 697

页数：7

共 15 条

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