HIGH MOBILITY HYDROGENATED AND OXYGENATED MICROCRYSTALLINE SILICON AS A PHOTOSENSITIVE MATERIAL IN PHOTOVOLTAIC APPLICATIONS

被引:19
作者
FARAJI, M [1 ]
GOKHALE, S [1 ]
CHOUDHARI, SM [1 ]
TAKWALE, MG [1 ]
GHAISAS, SV [1 ]
机构
[1] UNIV POONA,DEPT ELECTR SCI,POONA 411007,MAHARASHTRA,INDIA
关键词
D O I
10.1063/1.106722
中图分类号
O59 [应用物理学];
学科分类号
摘要
Hydrogenated and oxygenated microcrystalline silicon (mc-Si:O:H) is prepared by rf glow discharge method with a mixture of silane, hydrogen, and oxygen. It is observed that the Hall mobility for the films can be approximately 35 cm2 V-1 s-1 under optimal oxygen contents. When used as i layer in a p-i-n solar cell configuration, the corresponding solar cell exhibited a 7.8% efficiency with a fill factor of 0.53 over 1-mm-diam spots. Further improvements are indicated from the solar cell characteristics.
引用
收藏
页码:3289 / 3291
页数:3
相关论文
共 6 条
[1]  
Cullity B.D., 1956, ELEMENTS XRAY DIFFRA, P98
[2]  
FARAJI M, 1991, UNPUB FAL MRS M BOST
[3]  
HAMAKAWA Y, 1985, AMORPHOUS SEMICONDUC, V16, P271
[4]  
JENG SJ, 1991, UNPUB FAL MRS M BOST
[5]  
PANKOVE JI, 1984, SEMICONDUCTORS SEM D, V21, P128
[6]  
SPEAR WE, 1981, J PHYSIQUE, V43, P257