OPTICAL CHARACTERIZATION OF DOPED AND UNDOPED GAAS AT 300-K

被引：9

作者：

ENGELBRECHT, JAA ^{[1
]}

LEE, IG ^{[1
]}

VENTER, DJL ^{[1
]}

机构：

[1] UNIV PORT ELIZABETH,CTR COMP,PORT ELIZABETH 6000,SOUTH AFRICA

来源：

INFRARED PHYSICS | 1987年 / 27卷 / 01期

关键词：

AcknoM’lrd~emc; nts~Thea uthor is indebted to A. Pretorius and S. Goodman discussions and the CSIR. Pretoria for financial assistance;

D O I：

10.1016/0020-0891(87)90051-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：57 / 62

页数：6

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