GROWTH OF GAAS CRYSTALS IN THE (111) POLAR DIRECTION

被引：19

作者：

MOODY, PL

GATOS, HC

LAVINE, MC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1960年 / 31卷 / 09期

关键词：

D O I：

10.1063/1.1735930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1696 / 1697

页数：2

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[1] ON THE GROWTH OF GALLIUM ARSENIDE CRYSTALS FROM THE MELT
ELLIS, SG
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (06) : 947 - 948
[2] GROWTH OF INSB CRYSTALS IN THE (111) POLAR DIRECTION
GATOS, HC
MOODY, PL
LAVINE, MC
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) : 212 - 213
[3] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433
[4] SYRINGE-TYPE SINGLE-CRYSTAL FURNACE FOR MATERIALS CONTAINING A VOLATILE CONSTITUENT
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KOLM, C
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1958, 29 (12) : 1144 - 1145
[5] GROWTH OF GALLIUM ARSENIDE BY HORIZONTAL ZONE MELTING
RICHARDS, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) : 600 - 603