THERMAL IMPEDANCE OF CERAMIC PACKAGES USING BEAM-LEAD IC CHIPS

被引:7
作者
HARDWICK, NE
机构
[1] Bell Telephone Laboratories Inc., Allentown, Pa
关键词
D O I
10.1109/PROC.1969.7345
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A three-dimensional analytical approximation for the thermal impedance of a beam-lead IC package is obtained by calculating the thermal resistance of the individual elements and solving by the electrothermal analog technique. For a single chip package, thermal impedance values are presented for both a centrally located 0.005 inch diameter junction area and a source evenly distributed over the active surface of the chip under the following mounting conditions: A) package with external leads heat-sinked; b) package with ceramic base heat-sinked; c) chip thermally isolated on AI2O3 substrate. Also, variations in the thermal impedance of the package with changes in the chip component dimensions are shown graphically. For arrays of beam-lead chips on small ceramic substrates, curves are presented for the upper and lower boundaries of maximum chip power as a function of the number of chips appliqued to the substrate. The results indicate that the relatively low power levels which are characteristic of most logic-type beam-lead devices create no thermal problems when packaged individually. However. for large chip arrays the ability of a particular substrate to dissipate the heat generated may be • limiting factor even for these seemingly insignificant power levels? © 1969 IEEE. All rights reserved.
引用
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页码:1616 / &
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