RESONANT PHOTOLUMINESCENCE STUDIES OF THE GROWTH-INDUCED DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：11

作者：

CHARBONNEAU, S

MCMULLAN, WG

THEWALT, MLW

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.38.3587

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3587 / 3590

页数：4

共 17 条

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[8] SELECTIVE EXCITATION LUMINESCENCE IN BULK-GROWN GAAS [J].

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[10] SIMULTANEOUS SUBNANOSECOND TIMING INFORMATION AND 2D SPATIAL INFORMATION FROM IMAGING PHOTOMULTIPLIER TUBES [J].

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