THERMAL EFFECTS ON INTEGEGRITY OF ALUMINUM TO SILICON CONTACTS IN SILICON INTEGRATED CIRCUITS

被引：20

作者：

ANSTEAD, RJ

FLOYD, SR

机构：

[1] Goddard Soace Flight Center, National Aeronautics and Space Administration, Greenbelt, Md.

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 04期

关键词：

D O I：

10.1109/T-ED.1969.16761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Serious discontinuities in aluminum interconnections at contact windows of integrated circuits have been observed with the scanning electron microscope. In some instances the discontinuities have produced catastrophic failure. Two types of discontinuities have been observed and simulation of one type has been possible through exposure to temperatures 25° to 50°C below the aluminum-silicon eutectic of 577°C. Preliminary electron probe analysis has revealed their presence of silicon in the interconnection regions overlying the silicon dioxide steps bordering the contact windows. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：381 / &