SEMICONDUCTOR-LASER WITH INTEGRAL LIGHT-INTENSITY DETECTOR

被引：1

作者：

SCIFRES, DR

STUTIUS, W

机构：

[1] Xerox Palo Alto Research Center, Palo Alto

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 01期

关键词：

D O I：

10.1063/1.90914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An integrated Si Schottky-barrier detector for the output power stabilization of a GaAs/GaAlAs DH laser mounted on a Si heat sink is described. The signal emitted from the rear laser mirror and detected by the integral Schottky diode was used to stabilize the laser output power to within ∼1% over a 32°C temperature range, thus eliminating the need for mounting fibers to or aligning bulky discrete detectors with the rear laser mirror.

引用

页码：16 / 18

页数：3

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