REACTIONS BETWEEN COBALT AND GALLIUM-ARSENIDE IN BULK AND THIN-FILM FORMS

被引：17

作者：

SHIAU, FY

CHANG, YA

LIN, JC

机构：

[1] ALCOA,ALCOA LABS,ALCOA CTR,PA 15069

[2] TRACE STORAGE TECHNOL CORP,HSINCHU,TAIWAN

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1992年 / 32卷 / 03期

关键词：

D O I：

10.1016/0254-0584(92)90215-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The GaAs/Co system was studied experimentally using bulk and thin-film diffusion couples. The samples were analyzed for reaction phase sequence, phase morphology, phase composition and electrical characteristics. The reaction sequence was found to be complex, but was the same for both types of diffusion couple. Likewise, the compositions of the phases CoGa and CoAs formed at the interface GaAs/Co were the same for both types of diffusion couples, and are in agreement with the phase diagram within the uncertainties of the data.

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页码：300 / 309

页数：10

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