IMPURITY STATE ELECTROABSORPTION STUDIES IN OXYGEN-DOPED GAAS

被引：8

作者：

JONATH, AD ^{[1
]}

BUBE, RH ^{[1
]}

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

来源：

SURFACE SCIENCE | 1973年 / 37卷 / 01期

关键词：

D O I：

10.1016/0039-6028(73)90315-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：167 / 174

页数：8

共 17 条

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[4]

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[5]

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[7] ELECTRIC-FIELD MODULATION OF VIBRATIONAL ABSORPTION OF OH- IN KBR [J].

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[8]

JONATH AD, TO BE PUBLISHED

[9]

OMELIANOVSKI E, UNPUBLISHED DATA

[10] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].

ONTON, A ;

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