GROWTH OF ALUMINUM FILMS BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION USING TRITERTIARYBUTYLALUMINIUM

被引：16

作者：

JONES, AC ^{[1
]}

AULD, J ^{[1
]}

RUSHWORTH, SA ^{[1
]}

CRITCHLOW, GW ^{[1
]}

机构：

[1] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 135卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90753-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The new aluminium precursor, tritertiarybutylaluminium (TTBA), has been used successfully for the growth of high purity aluminium films by low pressure chemical vapour deposition (LPCVD). The aluminium films were grown over the temperature range 300-450-degrees-C on Si(111) substrates and had growth rates of up to 2 mum min-1. A comparison with aluminium films grown using triisobutylaluminium (TIBA) is made.

引用

页码：285 / 289

页数：5

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