ELECTRICAL PROPERTIES OF METAL-SIO2-SILICON STRUCTURES UNDER MECHANICAL-STRESS

被引：11

作者：

WONSIEWI.BC ^{[1
]}

MCCAUGHA.DV ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 12期

关键词：

D O I：

10.1063/1.1662179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5476 / 5479

页数：4

共 15 条

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[4] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

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[5] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

DEAL, BE ;

SKLAR, M ;

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[6]

FONASH SJ, TO BE PUBLISHED

[7] SURFACE CHARGES INDUCED BY MECHANICAL STRESSES IN SILICON-SILICON OXIDE INTERFACE [J].

FRIEDRICH, H .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :639-+

[8]

GODZHIEV ND, 1971, SOV PHYS SEMICOND, V5, P835

[9] X-RAY-DIFFRACTION TOPOGRAPHS OF SILICON CRYSTALS WITH SUPERPOSED OXIDE FILM .1. THEORY AND COMPUTATIONAL PROCEDURES [J].

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[10]

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