AMPLIFIED MOS IMAGER FOR SOFT-X-RAY IMAGING

被引：6

作者：

TAKAYANAGI, I ^{[1
]}

NAGAI, K ^{[1
]}

TETSUKA, H ^{[1
]}

INOUE, Y ^{[1
]}

ARAKI, S ^{[1
]}

MOCHIMARU, S ^{[1
]}

IKETAKI, Y ^{[1
]}

HORIKAWA, Y ^{[1
]}

MATSUMOTO, K ^{[1
]}

机构：

[1] OLYMPUS OPT CO LTD,T MOROKUMA RES LAB,TOKYO 192,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 08期

关键词：

D O I：

10.1109/16.398650

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new area sensor for soft X-rays, and its performance. The operational principle is based on detecting the change in potential of a floating photodiode caused by X-ray-induced electron-hole pairs generation in a stacked amorphous silicon photoconversion layer. The photoresponse was measured at wavelength from 50 Angstrom to 160 Angstrom. The signal to noise ratio of 28 dB was achieved, when the number of incident 70 Angstrom X-ray photons is as low as 230/pixel. Quantum Efficiency (stored carriers / photon) at 70 Angstrom wavelength was 22. In addition, good reproducibility (< 10 % deviation) between different detectors and good reproducibility (< 20 % deviation) after ten months were also clarified. The performance of this area sensor indicates its potential for detection of soft X-ray images.

引用

页码：1425 / 1432

页数：8

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