NUCLEATION OF ISLANDS IN GAAS MOLECULAR-BEAM EPITAXY STUDIED BY IN-SITU SCANNING ELECTRON-MICROSCOPY

被引：5

作者：

INOUE, N ^{[1
]}

OSAKA, J ^{[1
]}

HOMMA, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00951-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied two-dimensional nucleation of islands in the molecular beam epitaxy (MBE) of GaAs by in-situ scanning electron microscopy and found that the islands do not appear until about 1/3 monolayer is deposited. In contrast to what is expected from the previous simple nucleation and growth model, we observed islands to form continuously.

引用

页码：107 / 109

页数：3

共 7 条

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