DISPLACEMENT DAMAGE EXTREMES IN SILICON DEPLETION REGIONS

被引：65

作者：

MARSHALL, PW

DALE, CJ

BURKE, EA

SUMMERS, GP

BENDER, GE

机构：

[1] SACHS FREEMAN ASSOCIATES INC,LANDOVER,MD 20785

[2] MISSION RES CORP,SAN DIEGO,CA 92123

[3] UNIV MARYLAND,DEPT PHYS,CATONSVILLE,MD 21228

[4] GE,PITTSFIELD,MA 01201

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/23.45376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1831 / 1839

页数：9

共 15 条

[1]

ANG A, 1980, PROBABILITY CONCEPTS, V2

[2] EXTREME DAMAGE EVENTS PRODUCED BY SINGLE PARTICLES [J].

BURKE, EA ;

SUMMERS, GP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1575-1579

[3] GAMMA-INDUCED DOSE FLUCTUATIONS IN A CHARGE INJECTION DEVICE [J].

BURKE, EA ;

BENDER, GE ;

PIMBLEY, JK ;

SUMMERS, GP ;

DALE, CJ ;

XAPSOS, MA ;

MARSHALL, PW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1302-1306

[4] ENERGY-DEPENDENCE OF PROTON-INDUCED DISPLACEMENT DAMAGE IN SILICON [J].

BURKE, EA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1276-1281

[5]

CASTILLIO E, 1988, EXTREME VALUE THEORY

[6]

DALE CJ, GENERATION LIFETIME

[7]

Gumbel E J., 1958, STAT EXTREMES

[8] ELECTRIC-FIELD ENHANCED EMISSION FROM NON-COULOMBIC TRAPS IN SEMICONDUCTORS [J].

MARTIN, PA ;

STREETMAN, BG ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7409-7415

[9]

MICHON GJ, 1980, CID IMAGE SENSING CH

[10] PRIMARY RECOIL SPECTRA AND SUBCASCADE EFFECTS IN ION-BOMBARDMENT EXPERIMENTS [J].

MORE, RM ;

SPITZNAGEL, JA .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 60 (1-4) :27-33

← 1 2 →