EFFECT OF CHARGED DEFECTS ON PROPERTIES OF AMORPHOUS SI-BASED ALLOYS

被引：4

作者：

KUMEDA, M

YOSHITA, M

MORIMOTO, A

SHIMIZU, T

机构：

[1] Department of Electronics, Kanazawa University, Kanazawa

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 09期

关键词：

Amorphous Si-based alloys; Charged defects; Photoconductivity; Photocurrent decay;

D O I：

10.1143/JJAP.29.L1578

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of both neutral and charged defects on optoelectronic properties have been investigated in a-Si:H, Si1-xCx:H, Si1-xNx:H and Si1-xOx:H films by separating both kinds of defects. The increase in the density of neutral defects decreases the photoconductivity because they work as a recombination center for optically excited electrons in the conduction band. On the other hand, the increase in the density of charged defects increases the decay time of the photocurrent after the light-off because they work as a trapping center for the electrons. © 1990 The Japan Society of Applied Physics.

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收藏

页码：L1578 / L1581

页数：4

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