INTERFACE PHONONS IN SHORT-PERIOD GAAS/ALAS SUPERLATTICES - WAVE VECTOR-SELECTIVE AND DEFECT-ACTIVATED

被引：11

作者：

FUCHS, HD ^{[1
]}

MOWBRAY, DJ ^{[1
]}

CARDONA, M ^{[1
]}

CHALMERS, SA ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 79卷 / 03期

关键词：

D O I：

10.1016/0038-1098(91)90638-C

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Defect-activated interface modes with a large range of possible wave vectors in the superlattice planes, as well as interface modes with a well-defined in-plane wave vector, induced by a tilted 80 angstrom-period GaAs/AlAs superlattice on the surface of a (GaAs)7(AlAs)21 superlattice, have been observed using Raman spectroscopy. The experimentally measured frequencies are found to be in good agreement with calculations based on the macroscopic electrostatic continuum model. The efficiency of the Raman scattering by these interface phonons depends on the incident laser intensity, with high photoexcitation quenching them.

引用

页码：223 / 226

页数：4

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