EXCITON QUANTIZATION IN SYMMETRICAL AND ASYMMETRIC QUANTUM-WELLS - PSEUDO-2-DIMENSIONAL BEHAVIOR

被引：10

作者：

DANDREA, A

TOMASSINI, N

机构：

[1] Istituto di Metodologie Avanzate Inorganiche, Consiglio Nazionale Delle Ricerche, I-00016 Monterotondo Scalo, Roma

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.47.7176

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton quantization in a single quantum well of wide-gap II-VI semiconductors is studied as a function of sample thicknesses and electron and hole confinement potentials. The role of the asymmetric barriers in the exciton behavior is also discussed. A narrow range of thicknesses, where the exciton envelope function shows large asymmetric behavior, is pointed out. Oscillator-strength values of CdTe/CdxMn1-xTe quantum wells, recently published in the literature, compare well with our calculations.

引用

页码：7176 / 7181

页数：6

共 16 条

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